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PGH100N8 W032510Y GBLCSC08 MEGA64 JANSR 104ML 0FB00 511816
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  Datasheet File OCR Text:
 BAW75 ~ BAW76
FEATURES :
* High switching speed: max. 4 ns * Reverse voltage:max. 25V , 50V * Peak reverse voltage:max. 35V, 75 V * Pb / RoHS Free
HIGH SPEED SWITCHING DIODES
DO - 35 Glass (DO-204AH)
0.079(2.0 )max.
1.00 (25.4) min.
Cathode Mark
0.150 (3.8) max.
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
0.020 (0.52)max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
Parameter
Maximum Peak Reverse Voltage BAW75 BAW76 Maximum Reverse Voltage Maximum Average Forward Current Half Wave Recitication with Resistive Load , f 50Hz Maximum Power Dissipation Maximum Surge Forward Current at t < 1s , Tj = 25 C Maximum Junction Temperature Storage Temperature Range BAW75 BAW76
25 C ambient temperature unless otherwise specified.)
Symbol
VRM
Value
25 50 35 75 150 (1) 500 2 200 -65 to + 200
(1)
Unit
V
VRM
V
IF(AV) PD IFSM TJ TS
mA mW A C C
Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Electrical Characteristics (TJ = 25C unless otherwise noted)
Parameter
Reverse Current Forward Voltage BAW75 BAW76 BAW75 BAW76 BAW75 BAW76 BAW75 BAW76
Symbol
IR VF V(BR)R Cd Trr
Test Condition
VR = 25 V VR = 50 V IF = 30 mA IF = 100 mA Test with 5A pulses f = 1MHz ; VR = 0 IF = 10 mA , IR = 10 mA Irr = 1mA
Min 35 75 -
Typ -
Max 100 100 1.0 1.0 4.0 2.0 4
Unit nA V V pF ns
Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( BAW75 ~ BAW76 )
FIG. 1 ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE
500
1000
POWER DISSIPATION, PD (mW)
Forward Current , IF (mA)
400
100
300
10 TJ = 25C 1
200
100
0 0 100 200
0.1 0 0.4 0.8 1.2 1.4 1.6
Ambient Temperature , Ta (C)
Forward Voltage , VF (V)
FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERESE CURRENT VERSUS JUNCTION TEMPERATURE
1.2
105
1.0
Diode Capacitance , Cd (pF)
0.9 0.8
Reverse Current , IR (nA)
104
103
0.7 f = 1MHz; 0.6 TJ = 25C
102
0.5
10
0.4 0 10 20
1 0 100 200
Reverse Voltage , VR (V)
Junction Temperature , Ta (C)
Page 2 of 2
Rev. 02 : March 25, 2005


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